sep. 2001 CM200DU-34KA 3-m6 nuts tc measured point 4- 6.5 mounting holes l a b e l g1 g2 e2 e1 cm c1 e2 c2e1 (8.25) 18.25 (18.5) 62 0.25 80 110 93 0.25 2.5 21.5 6156 14 14 29 +1.0 ?.5 18 7 18 7 18 14 21 8.5 7.5 2.8 4 0.5 0.5 0.5 0.5 4 25 25 circuit diagram c2e1 e2 c1 g2 e2 e1 g1 application general purpose inverters & servo controls, etc mitsubishi igbt modules CM200DU-34KA high power switching use i c ................................................................... 200a v ces .......................................................... 1700v insulated type 2-elements in a pack outline drawing & circuit diagram dimensions in mm
sep. 2001 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c ) q gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 1000v, i c = 200a, v ge = 15v v cc = 1000v, i c = 200a v ge1 = v ge2 = 15v r g = 1.6 ? , inductive load switching operation i e = 200a i e = 200a, v ge = 0v, t j = 25 c i e = 200a, v ge = 0v, t j = 125 c igbt part (1/2 module) fwdi part (1/2 module) case to fin, thermal compound applied *2 (1/2 module) tc measured point is just under the chips i c = 20ma, v ce = 10v i c = 200a, v ge = 15v v ce = 10v v ge = 0v 1700 20 200 400 200 400 1100 40 ~ +150 40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 580 mitsubishi igbt modules CM200DU-34KA high power switching use v v w c c v n m n m g a a 1 0.5 4.0 29 4.8 1.5 600 200 700 800 600 4.6 0.11 0.18 0.05 ? 3 ma a nf nc c v v c/w 3.2 3.8 900 9.6 2.2 0.02 5.5 v v ns 47 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance symbol parameter v ge(th) v ce(sat) note 1. i e , v ec , t rr , q rr , die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. * 1 : tc measured point is indicated in outline drawing. * 2 : typical value is measured by using shin-etsu silicone g-746 . * 3 : if you use this value, r th(f-a) should be measured just under the chips. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage weight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c main terminal to base plate, ac 1 min. main terminal m6 mounting holes m6 typical value symbol parameter collector current emitter current torque strength conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit ty p. limits min. max. maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c) test conditions
sep. 2001 mitsubishi igbt modules CM200DU-34KA high power switching use performance curves 0 400 200 300 100 0 246810 output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) t j = 25 c 11 12 10 9 8 v ge = 20v 15 14 048121620 transfer characteristics (typical) collector current (a) gate-emitter voltage v ge (v) v ce = 10v t j = 25 c t j = 125 c 300 400 200 100 0 6 5 4 3 1 2 0 0 300 200 100 400 collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v ge = 15v t j = 25 c t j = 125 c 10 8 6 4 2 0 20 6 8 12 16 10 14 18 gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) t j = 25 c i c = 400a i c = 200a i c = 80a 10 0 2 3 5 7 10 1 2 3 5 7 10 2 10 3 2 3 5 7 12345 free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) t j = 25 c 10 1 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 capacitance? ce characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) c ies c oes c res v ge = 0v
sep. 2001 mitsubishi igbt modules CM200DU-34KA high power switching use 10 1 10 2 57 10 3 23 57 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 1 23 half-bridge switching characteristics (typical) switching times (ns) collector current i c (a) conditions: v cc = 1000v v ge = 15v r g = 1.6 ? t j = 125 c inductive load t d(off) t d(on) t f t r 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) t rr i rr conditions: v cc = 1000v v ge = 15v r g = 1.6 ? t j = 25 c inductive load 10 1 10 3 10 5 10 4 10 0 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 3 23 57 23 57 23 57 23 57 10 1 10 2 10 1 10 0 10 3 10 3 7 5 3 2 10 2 7 5 3 2 10 1 3 2 23 57 23 57 single pulse t c = 25 c transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j c) ( c/w) tmie (s) igbt part: per unit base = r th(j c) = 0.11 c/ w fwdi part: per unit base = r th(j c) = 0.18 c/ w 0 4 8 16 12 20 0 200 600 1200 400 1000 800 gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) v cc = 800v v cc = 1000v i c = 200a
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